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| SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS RDS(ON) ID TO-220 600V 8 2A Description S The TO-220 package is widely preferred for commercial and industrial applications. The SSM02N60P is well suited for DC/DC and AC/DC converters in telecom, industrial and consumer applications. G D S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 20 2 1.26 6 39 0.31 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 130 2 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 62 Unit /W /W Rev.2.01 6/06/2003 www.SiliconStandard.com 1 of 6 SSM02N60P Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=20V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= 20V ID=2A VDS=480V VGS=10V VDD=300V ID=2A RG=10,VGS=10V RD=150 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 2 6 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25, IS=2A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=60mH , RG=25 , IAS=2A. 3.Pulse width <300us , duty cycle <2%. Rev.2.01 6/06/2003 www.SiliconStandard.com 2 of 6 SSM02N60P 1.5 T C =25 o C V G =10V V G =6.0V V G =5.5V 0.8 T C =150 o C V G =10V V G =6.0V V G =5.5V ID , Drain Current (A) ID , Drain Current (A) 1 0.6 V G =5.0V 0.4 V G =5.0V 0.5 V G =4.5V 0.2 V G =4.5V 0 0 5 10 15 20 0 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =1A V G =10V 1.1 2 Normalized BVDSS (V) Normalized R DS(ON) 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( C ) o Fig 3. Normalized BVDSS vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature Rev.2.01 6/06/2003 www.SiliconStandard.com 3 of 6 SSM02N60P 2.4 50 2 40 ID , Drain Current (A) 1.6 30 1.2 PD (W) 20 10 0 25 50 75 100 125 150 0.8 0.4 0 0 50 100 150 T c , Case Temperature ( o C ) Tc, Case Temperature ( C ) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 10 10us Normalized Thermal Response (R thjc) DUTY=0.5 0.2 1 100us 1ms ID (A) 0.1 0.1 0.05 0.1 10ms 100ms T c =25 C Single Pulse o PDM 0.02 SINGLE PULSE 0.01 t T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 1 10 100 1000 10000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Rev.2.01 6/06/2003 www.SiliconStandard.com 4 of 6 SSM02N60P f=1.0MHz 16 1000 I D =2A 14 V DS =320V V DS =400V V DS =480V VGS , Gate to Source Voltage (V) 12 10 Ciss C (pF) 100 8 6 4 Coss 2 Crss 0 0 2 4 6 8 10 12 14 16 18 20 10 1 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 5 4 10 T j = 150 o C IS (A) VGS(th) (V) 1.4 1.6 T j = 25 o C 3 2 1 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( C ) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage vs. Junction Temperature Rev.2.01 6/06/2003 www.SiliconStandard.com 5 of 6 SSM02N60P VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G 10% + 10 V S VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 10V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Rev.2.01 6/06/2003 www.SiliconStandard.com 6 of 6 |
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